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         DHG 30 I 1200 HA ns Sonic Fast Recovery Diode Symbol Definition R a t i n g s Features / Advantages: typ. max. IFSM IR A V 200 IFAV A VF 2.26 RthJC 0.70 K/W VR = 1200 1 3 min. 30 t = 10 ms (50 Hz), sine Applications: VRRM V 1200 V°C= 25 50 μA TVJ TVJ =mA125 0.5 °C Package: Part number VR = 1200 TVJ =°C25 IF =A30 V TC = 90°C rectangular 0.5d = Ptot 180 W TC = 25 °C TVJ 150 °C -55 VRRM = IFAV = 1200 V 30 A 1.95 TVJ = 45°C DHG 30 I 1200 HA V max. repetitive reverse voltage reverse current forward voltage virtual junction temperature total power dissipation max. forward surge current Conditions Unit 3.00 TVJ =25 °C CJ junction capacitance V = V; TR 600 pFf = 1 MHz = °CVJ 25 VF0 V 1.25 TVJ = 150°C rF 30 m? V 2.27 TVJ =°C125 IF =A30 V 1.95 3.20 IF =A60 IF =A60 threshold voltage slope resistance for power loss calculation only Backside: cathode 23 A TVJ =°C25 reverse recovery time A 30 200 350 ns trr = 200 ns ● Housing: TO-247 High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode ●rIndustry standard outline ●rEpoxy meets UL 94V-0 ●rRoHS compliant IRM max. reverse recovery current IF =A;30 VR =V600 T=VJ 125°C -diF/dt =A/μs600 trr TVJ =°C25 T=VJ 125°C 11 thermal resistance junction to case ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutatin g switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) average forward current IXYS reserves the right to change limits, conditions and dimensions. ? 2011 IXYS all rights reserved 20110510a Data according to IEC 60747and per diode unless otherwise specified |